Datasheet Analog Devices HMC5805ALS6TR — 数据表

HMC5805ALS6
v02.0517 AMPLIFIERS -LINEAR & POWER -SMT GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC -40 GHz
Typical Applications Features The HMC5805ALS6 is ideal for: High P1dB Output Power: 24.5 dBm • Test Instrumentation High Psat Output Power: 27 dBm • Microwave Radio & VSAT Gain: 11.5 dB • Military & Space Output IP3: 29 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 175 mA • Fiber Optics 16 Lead Ceramic 6x6 mm SMT Package: 36 mm2 Functional Diagram
General Description
The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 11.5 dB of gain,
29 dBm output IP3 and +24 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805ALS6 is ideal for EW,
ECM, Radar and test equipment applications. The
HMC5805ALS6 amplifier I/Os are internally matched
to 50 Ohms and the 6x6 mm SMT package is well
suited for automated assembly techniques. Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -5
9 12.5 Typ.
5 -30 9 Max. Min. Typ. Max. Units 30 -40 GHz
dB 11.5 11.5 Gain Flatness ±1.0 ±0.75 ±0.75 dB Gain Variation Over Temperature 0.01 0.02 0.025 dB/ °C
dB Input Return Loss 17 11 11 Output Return Loss 18 13 9 dB 24.5 23 dBm 27 27 26 dBm Output Third Order Intercept (IP3) 34 29 26 dBm Noise Figure 4.5 4 7 dB Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 175 175 175 mA Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 19 25 18 * Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other …