Datasheet Analog Devices HMC1131LC4TR — 数据表

GaAs, pHEMT, MMIC, Medium Power
Amplifier, 24 GHz to 35 GHz
HMC1131 Data Sheet VDD2 VDD3 VDD4 NIC 22 20 19 18 NIC 17 GND RFIN 3 16 RFOUT GND 4 15 GND NIC 5 14 NIC NIC 6 13 NIC 1.5kΩ 1.5kΩ 12 NIC 11 VGG2 9 NIC NIC NIC 10 HMC1131 PACKAGE
BASE 13105-001 VDD1 21 NIC 23 1
2 7 Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM NIC
GND 8 APPLICATIONS 24 FUNCTIONAL BLOCK DIAGRAM High saturated output power (PSAT): 25 dBm
High output third-order intercept (IP3): 35 dBm
High gain: 22 dB (24 GHz to 27 GHz)
High output power for 1 dB compression (P1dB): 24 dBm
DC supply: 5 V at 225 mA
Compact 24-lead, 4 mm × 4 mm LCC package VGG1 FEATURES Figure 1. GENERAL DESCRIPTION
The HMC1131 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), driver amplifier that operates from
24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the
24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of
output power at 1 dB gain compression, while requiring 225 mA
from a 5 V supply. Rev. C The HMC1131 is capable of supplying 25 dBm of saturated output
power and is housed in a compact, 4 mm × 4 mm ceramic
leadless chip carrier (24-lead LCC). The HMC1131 is an ideal
driver amplifier for a wide range of applications, including …