Datasheet Analog Devices HMC635-SX — 数据表

HMC635
v00.1107 DRIVER & GAIN BLOCK AMPLIFIERS -CHIP 2 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 -40 GHz Typical Applications Features The HMC635 is ideal for: Gain: 19.5 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +29 dBm • LO Driver for Mixers Saturated Power: +24 dBm @ 15% PAE • Military & Space Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
Die Size: 1.95 x 0.84 x 0.10 mm Functional Diagram General Description
The HMC635 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 19.5 dB of gain, +29 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635 is capable of
providing up to +24 dBm of saturated output power at
15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs). All data
is taken with die connected at input and output RF
ports via two 1 mil wedge bonds of 500μm length. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA
Parameter Min. Frequency Range
Gain Typ. Max. Min. 18 -36
16 Gain Variation Over Temperature 19.5
0.045 16 …