Datasheet Analog Devices HMC-AUH320-DIE — 数据表

HMC-AUH320
v04.0412 Linear & Power Amplifiers -CHIP GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 -86 GHz
Typical Applications Features This HMC-AUH320 is ideal for: Gain: 16 dB @ 74 GHz • Short Haul / High Capacity Links P1dB: +15 dBm • Wireless LAN Bridges Supply Voltage: +4V • Automotive Radar 50 Ohm Matched Input/Output • Military & Space Die Size: 2.20 x 0.87 x 0.1 mm • E-Band Communication Systems General Description Functional Diagram The HMC-AUH320 is a high dynamic range, four stage
GaAs HEMT MMIC Medium Power Amplifier which
operates between 71 and 86 GHz. The HMC-AUH320
provides 16 dB of gain at 74 GHz, and an output
power of +15 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-AUH320
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
RF probes contacting the die pads. Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130mA [2]
Parameter Min. Frequency Range
Gain
Input Return Loss 10 Typ. Max. Units 71 -86 GHz 16 dB 4 dB Output Return Loss 6 dB Output power for 1dB Compression (P1dB) 15 dBm Saturated Output Power (Psat) 16 dBm Supply Current (Idd1+Idd2) 130 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd1 = 40mA, Idd 2 = 90mA or Iddtotal = 130 mA. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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