Datasheet Analog Devices HMC450QS16GETR — 数据表

HMC450QS16G / 450QS16GE
v02.0406 LINEAR & POWER AMPLIFIERS -SMT 11 GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 -1.0 GHz Typical Applications Features The HMC450QS16G / HMC450QS16GE is ideal for
power and driver amplifier applications: Gain: 26 dB • GSM, GPRS, & Edge +40 dBm Output IP3 • CDMA & WCDMA Integrated Power Control (Vpd) • Base Stations & Repeaters Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description 32% PAE @ 28.5 dBm Output Power The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz. The
amplifier is packaged in a low cost, surface mount
16 lead package and offers the same pinout and
functionality as the higher band HMC413QS16G 1.62.3 GHz PA. With a minimum of external components,
the amplifier provides 26 dB of gain, +40 dBm OIP3
and +28.5 dBm of saturated power from a +5V supply
voltage. The integrated power control (Vpd) can be used
for full power down or RF output power/current control.
The combination of high gain and high output IP3
make the HMC450QS16G & HMC450QS16GE ideal
linear drivers for Cellular, PCS & 3G applications. Electrical Specifi cations, TA = +25° C, Vs = +5V, Vpd = +4V [1]
Parameter Min. Frequency Range Typ. Max. 0.8 -1.0 Gain 23 Gain Variation Over Temperature GHz 26
0.015 Units dB
0.025 dB/°C Input Return Loss 17 dB Output Return Loss 13 dB 26 dBm 28.5 dBm 40 dBm Output Power for 1 dB Compression (P1dB) 23 Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2] 37 Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed tON, tOFF 8 dB 310 mA 12 mA 10 ns [1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for …