Datasheet Analog Devices ADL8104ACPZN-R7 — 数据表

Wideband, High Linearity,
Low Noise Amplifier, 0.4 GHz to 7.5 GHz
ADL8104 Data Sheet 13 NC
11 RFOUT
10 GND NC 4 9 NC 8 NC 3 NC
23884-001 14 VDD 16 NC 12 NC RFIN 2 NC 5 Test instrumentation
Military communications GND 1 NC 7 APPLICATIONS 15 RBIAS FUNCTIONAL BLOCK DIAGRAM Single positive supply (self biased)
High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz
High gain: 15 dB typical at 0.6 GHz to 6 GHz
High OIP3: 32 dBm typical
Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz
RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP NC 6 FEATURES Figure 1. GENERAL DESCRIPTION
The ADL8104 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise, wideband,
high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.
The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to
6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a
20 dBm typical output power for 1 dB compression (OP1dB) at
0.6 GHz to 6 GHz, and a typical output third-order intercept
(OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA
from a 5 V drain supply voltage. The low noise amplifier has a Rev. 0 high output second-order intercept (OIP2) of 52 dBm typical at
0.6 GHz to 6 GHz, making the ADL8104 suitable for military …