Datasheet Analog Devices ADL9005ACPZN-R7 — 数据表

FUNCTIONAL BLOCK DIAGRAM 20 NC 19 NC 21 NC 22 NC ADL9005
23 ACG3 18 NC RBIAS 1
NC 2 13 NC ACG2 12 14 NC NC 6 ACG1 11 15 GND GND 5 NC 10 16 RFOUT /VDD RFIN 4 NC 7 Test instrumentation
Military
Communications 17 GND GND 3 NC 9 APPLICATIONS 25033-001 Single positive supply
Low noise figure: 2.5 dB typical from 0.01 GHz to 14 GHz
High gain: 17.5 dB typical from 0.01 GHz to 14 GHz
OP1dB: 13.5 dBm typical from 0.01 GHz to 20 GHz
High OIP3: 26 dBm typical from 0.01 GHz to 14 GHz
RoHS-compliant, 4 mm × 4 mm, 24-lead LFCSP 24 ACG4/V DD2 FEATURES NC 8 Data Sheet Wideband, Low Noise Amplifier, Single
Positive Supply, 0.01 GHz to 26.5 GHz
ADL9005 Figure 1. GENERAL DESCRIPTION
The ADL9005 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), wideband, LNA that
operates from 0.01 to 26.5 GHz. The ADL9005 provides a typical
gain of 17.5 dB from 0.01 GHz to 14 GHz with a positive gain
slope from 14 GHz to 20 GHz, a 13.5 dBm typical output power
at 1 dB compression (OP1dB) from 0.01 GHz to 20 GHz, a 2.5 dB
typical noise figure from 0.01 GHz to 14 GHz, and a typical output
third-order intercept (OIP3) of 26 dBm from 0.01 GHz to 14 GHz,
requiring only 80 mA from a 5 V supply voltage. The saturated
output power (PSAT) of up to 16 dBm enables the LNA to function …