Datasheet Analog Devices HMC8410LP2FETR — 数据表

Data Sheet 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8410 FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.1 dB typical
High gain: 19.5 dB typical
High output third-order intercept (IP3): 33 dBm typical
6-lead, 2 mm × 2 mm LFCSP package HMC8410 RFIN/VGG1 RFOUT/VDD 14657-001 APPLICATIONS
Software defined radios
Electronic warfare
Radar applications Figure 1. GENERAL DESCRIPTION
The HMC8410 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410
provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure,
and a typical output IP3 of 33 dBm, requiring only 65 mA from
a 5 V supply voltage. The saturated output power (PSAT) of up to
22.5 dBm enables the low noise amplifier (LNA) to function as a
local oscillator (LO) driver for many of Analog Devices, Inc.,
balanced, I/Q or image rejection mixers. Rev. D The HMC8410 also features inputs/outputs (I/Os) that are
internally matched to 50 Ω, making it ideal for surface-mounted
technology (SMT)-based, high capacity microwave radio
applications.
The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, …