Datasheet Analog Devices HMC753LP4ETR — 数据表

1 GHz to 11 GHz, GaAs, HEMT,
MMIC Low Noise Amplifier
HMC753 Data Sheet NIC NIC NIC GND 21 20 19 HMC753 GND 1 15 GND GND 5 14 GND GND 6 13 GND GND 12 RFOUT GND 4 NIC 11 16 VDD 10 GND RFIN 3 VGG1 9 GND 17 GND 7 18 GND 2 13494-001 NIC 22 GND
24 23 FUNCTIONAL BLOCK DIAGRAM Noise figure: 1.5 dB at 4 GHz (see Figure 10)
Gain
16.5 dB at 1 GHz to 6 GHz
14 dB at 6 GHz to 11 GHz
Output power for 1 dB compression (P1dB): 18 dBm
at 1 GHz to 6 GHz
Supply voltage (VDD): 5 V at 55 mA
Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz
50 Ω matched input/output (I/O)
24-lead lead frame chip scale package (LFCSP): 16 mm2 VGG2 8 FEATURES Figure 1. APPLICATIONS
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation GENERAL DESCRIPTION
The HMC753 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), low noise, wideband
amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier
operates between 1 GHz and 11 GHz, providing up to 16.5 dB
of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at
4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to …