Datasheet Analog Devices HMC-ALH435-SX — 数据表

HMC-ALH435
v03.1009 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 -20 GHz
Features Typical Applications
This HMC-ALH435 is ideal for: Noise Figure: 2.2 dB @ 12 GHz • Wideband Communication Systems Gain: 13 dB @ 14 GHz • Surveillance Systems P1dB Output Power: +16 dBm @ 12 GHz • Point-to-Point Radios Supply Voltage: +5V @ 30 mA • Point-to-Multi-Point Radios Die Size: 1.48 x 0.9 x 0.1 mm • Military & Space
• Test Instrumentation
• VSAT General Description Functional Diagram The HMC-ALH435 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 5
and 20 GHz. The amplifier provides 13 dB of gain,
2.2 dB noise figure at 12 GHz and +16 dBm of output
power at 1 dB gain compression while requiring only
30 mA from a +5V supply voltage. The HMC-ALH435
amplifier is ideal for integration into Multi-ChipModules (MCMs) due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= +5V
Parameter Min. Frequency Range
Gain Typ. Max. 5 -20
10 Units
GHz 13 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure 2.2 2.6 dB Input Return Loss 5 dB Output Return Loss 10 dB Output IP3 25 dBm Output Power for 1 dB Compression 16 dBm Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) 30 mA *Unless otherwise indicated, all measurements are from probed die 1 -180 For price,
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