Datasheet Analog Devices HMC-ALH369 — 数据表

HMC-ALH369
v06.0118 LOW NOISE AMPLIFIERS -CHIP GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 -40 GHz
Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios P1dB Output Power: +11 dBm • Phased Arrays Supply Voltage: +5V @ 66 mA • VSAT Die Size: 2.10 x 1.37 x 0.1 mm • SATCOM General Description Functional Diagram The HMC-ALH369 is a GaAs MMIC HEMT three stage,
self-biased Low Noise Amplifier die which operates
between 24 and 40 GHz. The amplifier pro-vides 22 dB
of gain, from a single bias supply of +5V @ 66 mA with
a noise figure of 2 dB. The HMC-ALH369 amplifier die
is ideal for integration into Multi-Chip-Modules (MCMs)
due to its small size (2.88 mm²). Electrical Specifications [1], TA = +25° C, Vdd= +5V, Idd = 66mA
Parameter Min. Frequency Range
Gain Typ. Max. Min. 24 -27
22 Typ. 24 18 2.2 Input Return Loss 12 8 12 12 11 11 66 66 Output Power for 1 dB Compression
Supply Current (Idd) 9 Min. 2.7 2.0 Typ. Max. 37 -40 20 Noise Figure Output Return Loss Max. 27 -37
15
2.5 8 9 GHz 17
2.2 Units dB
2.7 dB
dB 12 dB 11 dBm 66 mA [1] Unless otherwise indicated, all measurements are from probed die 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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