Datasheet Analog Devices HMC-ALH313-SX — 数据表

HMC-ALH313
v02.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 -33 GHz Typical Applications Features This HMC-ALH313 is ideal for: Noise Figure: 3 dB • Point-to-Point Radios Gain: 20 dB • Point-to-Multi-Point Radios P1dB Output Power: +12 dBm • VSAT Supply Voltage: +2.5V @ 52 mA • Test Equipment & Sensors Die Size: 1.80 x 0.73 x 0.1 mm • Military & Space General Description Functional Diagram The HMC-ALH313 is a three stage GaAs MMIC
HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB
of gain, a 3 dB noise figure and +12 dBm of output
power at 1 dB gain compression while requiring only
52 mA from a +2.5V supply voltage. This amplifier die
is ideal for use as a LNA or driver amplifier, and may
be easily integrated into Multi-Chip-Modules (MCMs)
due to its small size (1.30 mm2) . Electrical Specifi cations [1], TA = +25° C, Vdd= 2.5V, Idd = 52mA [2]
Parameter Min. Frequency Range
Gain Typ. Max. 27 -33
18 Gain Variation over Temperature Units
GHz 20 dB 0.03 dB / °C Noise Figure 3 Input Return Loss 12 Output Return Loss 14 dB 12 dBm 52 mA Output Power for 1 dB Compression 10 Supply Current 3.5 dB
dB [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd total = 52 mA 1 -150 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 …