Datasheet Analog Devices HMC606-Die — 数据表

HMC606
v04.0118 LOW NOISE AMPLIFIERS -CHIP GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 -18 GHz
Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm • Microwave Radio Gain: 14 dB • Test Instrumentation Output IP3: +27 dBm • Military & Space Supply Voltage: +5V @ 64 mA • Fiber Optic Systems 50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm General Description Functional Diagram The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplifier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplifier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a significant improvement
over FET-based distributed amplifiers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply.
The HMC606 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50
Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V
Parameter Min. Frequency Range
Gain 11 Max. Min. Typ. Max. 12 -18
13 dB
dB 0.021 0.25 dB/ °C Noise Figure 4.5 6.5 dB Input Return Loss 20 22 dB Output Return Loss
Output Power for 1 dB Compression (P1dB) 10 GHz ±1.0 Gain Variation Over Temperature 14.0 Units ±1.0 Gain Flatness 15
12 15 10 15 dB 13 dBm
dBm Saturated Output Power (Psat) 18 15 Output Third Order Intercept (IP3) 27 22 dBm Phase Noise @ 100 Hz -140 -140 dBc/Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 1 Typ.
2 -12 64 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …