Datasheet Analog Devices HMC463LP5ETR — 数据表

HMC463LP5 / 463LP5E
v09.0717 AMPLIFIERS -LOW NOISE -SMT 7 GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 -20 GHz Typical Applications Features The HMC463LP5(E) is ideal for: Gain: 13 dB • Telecom Infrastructure Noise Figure: 2.8 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +18 dBm @ 10 GHz • Military EW, ECM & C I Supply Voltage: +5V @ 60mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram General Description 3 The HMC463LP5(E) is a GaAs MMIC pHEMT Low
Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides
13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring
only 60mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 6 -18 GHz making the HMC463LP5(E)
ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally
matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 60 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. 2-6
10 ±0.5 Gain Variation Over Temperature Max. Min. 6 -18 13 Gain Flatness Typ. 9 12 8 ±0.5 Typ. Max. Units 18 -20 GHz 11 dB ±0.5 dB 0.010 0.015 0.010 0.015 0.010 0.015 dB/ °C Noise Figure 3 4 3 5 5.5 6.5 dB Input Return Loss 15 13 12 dB Output Return Loss 13 10 10 dB 12 dBm Output Power for 1 dB Compression
(P1dB) 16 19 11 16 10 Saturated Output Power (Psat) 21 19 19 dBm Output Third Order Intercept (IP3) 30 24 22 dBm Supply Current
(Idd) (Vdd = 5V, Vgg1 = -0.9V Typ.) 60 80 60 80 60 80 mA * Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical. 7-1 Information
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