Datasheet Analog Devices HMC375LP3ETR — 数据表

HMC375LP3 / 375LP3E
v03.0610 AMPLIFIERS -LOW NOISE -SMT 7 GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 -2.2 GHz Typical Applications Features The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers: Noise Figure: 0.9 dB • GSM, GPRS & EDGE Gain: 17 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature • DECT Single Supply: +5V @ 136 mA Output IP3: +34 dBm 50 Ohm Matched Output Functional Diagram General Description
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC618LP3(E). Electrical Specifi cations, TA = +25° C, Vs = +5V
Parameter Min. Frequency Range
Gain 16.5 Gain Variation Over Temperature Max. Min. Typ. Max. Min. 1.9 -2.0 18.5 15.5 Typ. Max. Min. 2.0 -2.1 17.5 15 17 13 Typ. Max. GHz 15 dB 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 Input Return Loss 12 13 14 Units 2.1 -2.2 Noise Figure dB/°C
dB 15 dB Output Return Loss 13 16 11 8 dB Reverse Isolation 35 34 34 34 dB 17.5 dBm Output Power for
1dB Compression (P1dB)
Saturated Output Power (Psat) 7 -74 Typ.
1.8 -1.9 16 18.5 16 18.5 15 18 14.5 19.5 19.5 19.5 19.5 dBm Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, …