Datasheet Analog Devices HMC907APM5ETR — 数据表

HMC907APM5E
v02.0418 AMPLIFIERS -LINEAR & POWER -SMT GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 -22 GHz
Typical Applications Features The HMC907APM5E is ideal for: High P1dB Output Power: +28 dBm • Test Instrumentation High Gain: 14 dB • Military & Space High Output IP3: +40 dBm
Single Supply: +10 V @ 350 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description
The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
14 dB of gain, +40 dBm output IP3 and +28 dBm of
output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is
excellent at ±0.7 dB from 0.2 to 22 GHz making the
HMC907APM5E ideal for EW, ECM, Radar and test
equipment applications. The HMC907APM5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is
packaged in a leadless QFN 5x5 mm surface mount
package, and requires no external matching components. Electrical Specifications, TA = +25° C, Vdd = +10 V, Idd = 350 mA
Parameter Min. Frequency Range
Gain Max. Min. 11 Typ. Max. Min. 10 -18 13 11 13 12 Typ. Max. Units 18 -22 GHz 14 dB Gain Flatness ±0.7 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C Input Return Loss 15 15 18 dB Output Return Loss 14 16 18 dB Output Power for 1 dB Compression (P1dB) 25 Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure Supply Voltage (Vdd) 27.5 dBm 29 27 25.5 28.5 29 dBm 38.5 40 40 dBm 6 Quiescent Current (Idq) at (Vdd= 10V) 1 Typ.
0.2 -10 8 28 24.5 3 350 430 10 11 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No …