Datasheet Analog Devices ADMV7810CHIPS — 数据表

81 GHz to 86 GHz, 1 W E-Band Power
Amplifier with Power Detector
ADMV7810 Data Sheet
FEATURES GENERAL DESCRIPTION Gain: 20 dB typical
Output power for 1 dB compression: 28 dBm typical
Saturated output power: 29 dBm typical
Output third-order intercept: 33 dBm typical
Input return loss: 12 dB typical
Output return loss: 20 dB typical
DC supply: 4 V at 800 mA
No external matching required
Die size: 2.999 mm × 3.799 mm × 0.05 mm The ADMV7810 is an integrated E-band gallium arsenide (GaAs),
pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), medium power
amplifier with a temperature compensated on-chip power detector
that operates from 81 GHz to 86 GHz. The ADMV7810 provides
20 dB of gain, 28 dBm of output power at 1 dB compression, and
29 dBm of saturated output power at 18% power added efficiency
from a 4 V power supply. The ADMV7810 exhibits excellent
linearity and is optimized for E-band communications and
high capacity wireless backhaul radio systems. The amplifier
configuration and high gain make the device an excellent
candidate for last stage signal amplification before the antenna.
All data is taken with the chip in a 50 Ω test fixture connected via …