Datasheet Analog Devices ADPA7001-Die — 数据表

3 4 5 6 VDD2A VDD3A 7
VDD4A 2 VGG34A FUNCTIONAL BLOCK DIAGRAM Gain: 14.5 dB typical at 50 GHz to 70 GHz
S11: 22 dB typical at 50 GHz to 70 GHz
S22: 19 dB typical at 50 GHz to 70 GHz
P1dB: 17 dBm typical at 50 GHz to 70 GHz
PSAT: 21 dBm typical
OIP3: 25 dBm typical at 70 GHz to 90 GHz
Supply voltage: 3.5 V at 350 mA
50 Ω matched input/output
Die size: 2.5 mm × 3.32 mm × 0.05 mm VDD1A FEATURES VGG12A Data Sheet 50 GHz to 95 GHz, GaAs, pHEMT, MMIC,
Wideband Power Amplifier
ADPA7001CHIPS RFOUT 8 ADPA7001CHIPS APPLICATIONS 15 12 VDET VREF VDD4B VDD3B VGG34B 14 13 11 10 9 16895-001 16 VDD2B RFIN VGG12B 1 VDD1B Test instrumentation
Military and space
Telecommunications infrastructure Figure 1. GENERAL DESCRIPTION
The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic
microwave integrated circuit (MMIC), balanced medium power
amplifier, with an integrated temperature compensated on-chip
power detector that operates from 50 GHz to 95 GHz. In the
lower band of 50 GHz to 70 GHz, the ADPA7001CHIPS provides
14.5 dB (typical) of gain, 25.5 dBm output third-order intercept
(OIP3), and 17 dBm of output power for 1 dB gain compression. Rev. B In the upper band of 70 GHz to 90 GHz, the ADPA7001CHIPS
provides 14 dB (typical) of gain, 25 dBm output IP3, and
17.5 dBm of output power for 1 dB gain compression. The …