Datasheet Analog Devices HMC952ALP5GE — 数据表

HMC952ALP5GE
v03.0418 Amplifiers -Linear & Power -SMT GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 -14 GHz
Typical Applications Features The HMC952ALP5GE is ideal for: +35 dBm Psat @ 26% PAE • Point-to-Point Radios High P1dB Output Power: +34 dBm • Point-to-Multi-Point Radios High Gain: 32 dB • SATCOM High Output IP3: +43 dBm
Supply Voltage: Vdd = +6V @ 1400 mA
50 Ohm Matched Input/Output Functional Diagram General Description
The HMC952ALP5GE is a four-stage GaAs pHEMT
MMIC Medium Power Amplifier with a temperature
compensated on-chip power detector which operates
between 8 and 14 GHz. The amplifier provides
32 dB of gain and +34.5 dBm of saturated output
power at 26% PAE from a +6V supply. With up to
+43 dBm IP3 the HMC952ALP5GE is ideal for linear
applications such as point-to-point and point-to-multipoint radios or SATCOM applications demanding
+34.5dBm of efficient saturated output power. The RF
I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = +6V, Idd = 1400 mA [1]
Parameter Min. Typ. Frequency Range Min 8-9 Gain 28.5 Gain Variation Over Temperature 31 Typ. 32 28 30.5 dB 13 -14 Max. Units
GHz 0.02 dB/ °C 17 17 24 dB 31 33 13
31 33 32 14 dB 34 dBm 34.5 35 35 dBm 43 43 43 dBm 1400 1400 1400 mA [2] Total Supply Current Min. 9 -13
30 15 Saturated Output Power (Psat) Max 0.02 Output Return Loss
Output Power for 1 dB Compression (P1dB) Typ 0.02 Input Return Loss Output Third Order Intercept (IP3) Max. [1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Measurement taken at Pout / tone = +20 dBm. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other …