Datasheet Analog Devices HMC7229LS6TR — 数据表

FEATURES FUNCTIONAL BLOCK DIAGRAM
GND RFOUT GND VDET 15 14 13 12 2 10 VDD4 VGG1 3 9 VGG2 PACKAGE
BASE GND
NOTES
1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA
SHOWN HEREIN WAS MEASURED WITH THESE PINS
EXTERNALLY CONNECTED TO RF/DC GROUND. 13337-001 NIC GND RFIN NIC 8 VDD3 7 VDD2 6 11 5 1 4 Point to point radios
Point to multipoint radios
Very small aperture terminal (VSAT) and satellite
communications (SATCOM) VDD1 GND APPLICATIONS VREF HMC7229LS6 32 dBm typical saturated output power (PSAT) at 18% power
added efficiency (PAE) at 39 GHz
P1dB compression output power: 31.5 dBm typical
High output third-order intercept (IP3): 40 dBm typical
High gain: 24 dB typical
50 Ω matched input/output
Ceramic, 6 mm × 6 mm, high frequency, air cavity package 16 Data Sheet GaAs, pHEMT, MMIC, 1 W, Power Amplifier
with Power Detector, 37 GHz to 40 GHz
HMC7229LS6 Figure 1. GENERAL DESCRIPTION
The HMC7229LS6 is a four stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier, with an integrated temperature compensated on-chip
power detector that operates between 37 GHz to 40 GHz. The …