HMC1087F10
v04.1217 Amplifiers -Linear & Power -SMT 8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 -20 GHz
Typical Applications Features The HMC1087F10 is ideal for High Psat: +38.5 dBm • Test Instrumentation Power Gain at Psat: 6.5 dB • General Communications High Output IP3: +43.5 dBm • Radar Small Signal Gain: 11 dB • EW/ECM Supply Voltage: Vdd = +28V @ 850 mA
50 Ohm Matched Input/Output Functional Diagram 10-Lead Flange Mount Package General Description
The HMC1087F10 is an 8W Gallium Nitride (GaN)
MMIC Power Amplifier which operates between 2 and
20 GHz, and is provided in a 10-lead flange mount
package. The amplifier typically provides 11 dB of
small signal gain, +39 dBm of saturated output power,
and +43 dBm output IP3 at +28 dBm output power per
tone. The amplifier draws 850 mA quiescent current
from a +28V DC supply. The RF I/Os are matched to
50 Ohms for ease of use. Electrical Specifications, TA = +25° C, Vdd =+28V, Idd = 850 mA [1]
Parameter Min. Frequency Range Typ. Max. Min. 2 -12 Gain 8 11 Typ. Max. Min. 12 -17
7.5 10.5 7 Typ. Max. Units 17 -20 GHz 10 dB Gain Flatness ±0.6 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.014 0.024 0.018 dB/ °C Input Return Loss 12 12 12 dB Output Return Loss 13 12 11 dB Output Power for 3 dB Compression (P3dB) 38.5 37.5 37 dBm Power Gain for 3dB compression (P3dB) 8.5 7 6 dB 39.5 38.5 37.5 dBm 43.5 42.5 42 dBm Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2] Power Added Efficiency 30 17 15 Total Supply Current 850 850 850 mA [1] Adjust Vgg between -8 to 0V to achieve Idd = 850 mA typical.
[2] Measurement taken at Pout / tone = +28 dBm. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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