Datasheet Analog Devices HMC659LC5TR-R5 — 数据表

HMC659LC5
v04.0614 LINEAR & POWER AMPLIFIERS -SMT GaAs PHEMT MMIC
POWER AMPLIFIER, DC -15 GHz
Typical Applications Features The HMC659LC5 wideband PA is ideal for: P1dB Output Power: +27.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2 Functional Diagram General Description
The HMC659LC5
is a GaAs MMIC pHEMT
Distributed Power Amplifier which is housed in a
leadless 5 x 5 mm RoHS compliant ceramic SMT
package operating between DC and 15 GHz. The
amplifier provides 19 dB of gain, +35 dBm output IP3
and +27.5 dBm of output power at 1 dB gain
compression, while requiring 300mA from a +8V
supply. Gain flatness is excellent at ±1.4 dB from
DC -15 GHz making the HMC659LC5 ideal for EW,
ECM, Radar and test equipment applications. The
HMC659LC5 amplifier I/Os are internally matched
to 50 Ohms with no external components. The
HMC659LC5 is compatible with high volume surface
mount manufacturing techniques. Electrical Specifications, TA = +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -6
16 19 Typ. Max. Min. 6 -11
15 18 14 Typ. Max. Units 11 -15 GHz 17 dB Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C 20 18 17 dB Input Return Loss …