Datasheet Analog Devices HMC659-Die — 数据表

HMC659
v02.0217 AMPLIFIERS -LINEAR & POWER -CHIP GaAs PHEMT MMIC
POWER AMPLIFIER, DC -15 GHz
Typical Applications Features The HMC659 is ideal for: P1dB Output Power: +26.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.115 x 1.630 x 0.1 mm Functional Diagram General Description
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300mA
from a +8V supply. Gain flatness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -6
16.1 19.1 Typ. Max. Min. 6 -11
15.5 18.5 14.8 Typ. Max. Units 11 -15 GHz 17.8 dB Gain Flatness ±0.5 ±0.15 ±0.6 dB Gain Variation Over Temperature 0.013 0.018 0.025 dB/ °C Input Return Loss 19 17 15 dB Output Return Loss 18 17 15 dB 25 dBm Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 23 25.5 24 26.5 22.5 26 27 27 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 2.5 2 3 dBc Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) 300 300 300 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 300mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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