Datasheet Analog Devices HMC559-SX — 数据表

HMC559
v03.0208 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs PHEMT MMIC
POWER AMPLIFIER, DC -20 GHz Typical Applications Features The HMC559 wideband PA is ideal for: P1dB Output Power: +28 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +36 dBm • Military & Space Supply Voltage: +10V @ 400 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.12 x 1.50 x 0.1 mm Functional Diagram General Description
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
20 GHz. The amplifier provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifier applications.
The HMC559 amplifier I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -6
11 13 Gain Flatness ±0.5 Gain Variation Over Temperature 0.01 Typ. Max. Min. 6 -12
11 13.5 11.5 ±0.5
0.02 0.01 Typ. Max. GHz 14 dB ±1.5
0.02 Units 12 -20 0.02 dB
0.03 dB/ °C Input Return Loss 22 15 13 dB Output Return Loss 16 16 8 dB Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 25 28
30 24.5 27.5 …