Datasheet Analog Devices HMC459-DIE — 数据表

HMC459
v01.1007 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs PHEMT MMIC
POWER AMPLIFIER, DC -18 GHz Typical Applications Features The HMC459 wideband driver is ideal for: P1dB Output Power: +25 dBm • Telecom Infrastructure Gain: 17 dB • Microwave Radio & VSAT Output IP3: +31.5 dBm • Military & Space Supply Voltage: +8V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm Functional Diagram General Description
The HMC459 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 18 GHz. The amplifier provides 17 dB of gain,
+31.5 dBm output IP3 and +25 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is good making the
HMC459 ideal for EW, ECM and radar driver amplifier
applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration
into Multi-Chip-Modules (MCMs). All data is with the
chip in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils). Electrical Specifi cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -2.0
16.5 18.5 Gain Flatness ±0.5 Gain Variation Over Temperature 0.02 Typ. Max. Min. DC -6.0
15 18 14 ±0.75
0.03 0.02 Typ. Max. Min DC -10.0
17 9 Typ Max GHz 12 dB ±0.75
0.03 0.03 Units DC -18.0 dB …