Datasheet Analog Devices HMC464LP5ETR — 数据表

HMC464LP5E
v04.0218 LINEAR &POWER AMPLIFIERS -SMT GaAs PHEMT MMIC
POWER AMPLIFIER, 2 -20 GHz
Typical Applications Features The HMC464LP5E is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military EW, ECM & C I Supply Voltage: +8V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 25 mm2 Leadless SMT Package Functional Diagram General Description 3 The HMC464LP5E is a GaAs MMIC PHEMT Distributed Power Amplifiers in leadless 5 x 5 mm
surface mount packages which operate between 2 and 20 GHz. The amplifier provides 14 dB
of gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain flatness is good
from 2 -18 GHz making the HMC464LP5E ideal for
EW, ECM and radar driver amplifiers as well as test
equipment applications. The wideband amplifier I/O’s
are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 2.0 -6.0
12 14 Gain Flatness ±0.5 Gain Variation Over Temperature 0.025 Typ. Max. Min. 6.0 -16.0
11.5 13.5 8 ±0.5
0.035 0.03 Typ. Max. GHz 11 dB ±1.0
0.04 Units 16.0 -20.0 0.05 dB
0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB 21 dBm Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat) 23.5 26.5 22 25 18 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other …