Datasheet Analog Devices HMC454ST89E — 数据表

HMC454ST89 / 454ST89E
v05.0710 9 InGaP HBT ½ WATT HIGH IP3
AMPLIFIER, 0.4 -2.5 GHz Typical Applications Features The HMC454ST89 / HMC454ST89E is ideal for
applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE 50% PAE @ +28 dBm Pout • CDMA & W-CDMA +17.5 dBm W-CDMA Channel Power@ -45 dBc ACP • CATV/Cable Modem Single +5V Supply • Fixed Wireless & WLL Industry Standard SOT89 Package Gain: 12.5 dB @ 2150 MHz AMPLIFIERS -LINEAR & POWER -SMT Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description
The HMC454ST89 & HMC454ST89E are high dynamic
range GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between 0.4
and 2.5 GHz. Packaged in a low cost industry standard
SOT89, the amplifier gain is typically 17.8 dB from 0.8
to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a
minimum number of external components and a single
+5V supply, the amplifier output IP3 can be optimized
to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The
high output IP3 and PAE makes the HMC454ST89 an
ideal driver amplifier for Cellular/PCS/3G, WLL, ISM
and Fixed Wireless applications. Electrical Specifi cations, TA = +25°C, Vs= +5V [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 824 -960
16 Gain Variation Over Temperature 17.8
0.008 Typ. Max. Min. 1800 -2000
11
0.016 12.5
0.008 Typ. Max. 2000 -2200 …