Datasheet Analog Devices HMC414MS8GETR — 数据表

HMC414MS8G / 414MS8GE
v04.0607 GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 -2.8 GHz Typical Applications Features This amplifier is ideal for use as a power
amplifier for 2.2 -2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V Saturated Power: +30 dBm Power Down Capability LINEAR & POWER AMPLIFIERS -SMT 11 Low External Part Count Functional Diagram General Description
The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate
between 2.2 and 2.8 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal performance. With a minimum of external components,
the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs = 3.6V
Min.
Frequency Range Typ. Max. Min. 20 25 17 0.03 0.04 2.2 -2.8 Gain 17 Gain Variation Over Temperature Typ. Max. 2.2 -2.8 Units
GHz 20 25 dB 0.03 0.04 dB/ °C Input Return Loss 8 8 Output Return Loss 9 9 dB 27 dBm 30 dBm 39 dBm Output Power for 1 dB Compression (P1dB) 21 Saturated Output Power (Psat) 25 23 27 Output Third Order Intercept (IP3) 30 Noise Figure 11 -58 Vs = 5V Parameter 35 35 dB 6.5 7.0 dB 0.002 / 240 0.002 / 300 mA Supply Current (Icq) Vpd = 0V / 3.6V Control Current (Ipd) Vpd = 3.6V 7 7 mA Switching Speed tON, tOFF 45 45 ns For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 …