Datasheet STMicroelectronics STGAP2SICSTR — 数据表

STGAP2SICS
Datasheet Galvanically isolated 4 A single gate driver for SiC MOSFETs Features
•
•
•
•
•
•
•
•
•
•
•
•
• High voltage rail up to 1200 V
Driver current capability: 4 A sink/source @25°C
dV/dt transient immunity ±100 V/ns in full temperature range
Overall input-output propagation delay: 75 ns
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
3.3 V, 5 V TTL/CMOS inputs with hysteresis …