C2M1000170D VDS 1700 V ID @ 25˚C Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology RDS(on) 5.0 A 1.0 Ω N-Channel Enhancement Mode Features
Package
• • • • • High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Halogen Free, RoHS Compliant Benefits • • • • TO-247-3 Higher System Efficiency
Increased System Switching Frequency
Reduced Cooling Requirements
Increased System Reliability Applications • • • Auxiliary Power Supplies
Switch Mode Power Supplies
High-voltage Capacitive Loads Ordering Part Number Package Marking C2M1000170D TO-247-3 C2M1000170D Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Value Unit Test Conditions VDSmax Drain -Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate -Source Voltage -10/+25 V Absolute maximum values VGSop Gate -Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse)
PD
TJ , Tstg 1 Parameter 5.0
3.5 A VGS = 20 V, TC = 25˚C Note Fig. 19 VGS = 20 V, TC = 100˚C Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 69 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to
+150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1
8.8 Nm
lbf-in C2M1000170D Rev. 7, 02-2021 1.6mm (0.063”) from case for 10s
M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. 2.0 2.8 0.80 Drain-Source On-State Resistance VDS = VGS, ID = 0.5 mA V VDS = VGS, ID = 0.5 mA, TJ = 150 °C 100 μA VDS = 1.7 kV, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1.4 215 Coss Output Capacitance 19 Crss Reverse Transfer Capacitance 2.2 Eoss Coss Stored Energy 10.2 EON Turn-On Switching Energy VGS = 20 V, ID = 2 A Ω 1.04 Input Capacitance VGS = 20 V, ID = 2 A, TJ = 150 °C …