Datasheet STMicroelectronics MASTERGAN4TR — 数据表

MASTERGAN4
Datasheet High power density 600V half-bridge driver with two enhancement mode GaN
HEMT Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage
GaN power transistors:
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QFN 9 x 9 x 1 mm package
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RDS(ON) = 225 mΩ
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• IDS(MAX) = 6.5 A Reverse current capability
Zero reverse recovery loss
UVLO protection on low-side and high-side …