Datasheet ON Semiconductor BC640G — 数据表

BC640-016G
High Current Transistors
PNP Silicon
Features • This is a Pb−Free Device http://onsemi.com
COLLECTOR
2 MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −0.5 Adc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction
Temperature Range 3
BASE
1
EMITTER TO−92
CASE 29
STYLE 14 12 THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 3 …