Datasheet ON Semiconductor MJ14001G — 数据表

MJ14001 (PNP),
MJ14002* (NPN),
MJ14003* (PNP)
*Preferred Devices High−Current Complementary
Silicon Power Transistors
Designed for use in high−power amplifier and switching circuit
applications.
Features • High Current Capability − IC Continuous = 60 Amperes
• DC Current Gain − hFE = 15−100 @ IC = 50 Adc
• Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max)
@ IC = 50 Adc http://onsemi.com 60 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 300 WATTS • Pb−Free Packages are Available*
MARKING
DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Value Unit Collector−Emitter Voltage Rating
MJ14001
MJ14002/03 VCEO 60
80 Vdc Collector−Base Voltage MJ14001
MJ14002/03 VCBO 60
80 Vdc VEBO 5.0 Vdc IC 60 Adc Base Current − Continuous IB 15 Adc Emitter Current − Continuous IE 75 Adc Total Power Dissipation @ TC = 25°C
Derate Above 25°C PD 300 …