Datasheet ON Semiconductor FDV303N — 数据表

Digital FET, N-Channel
FDV303N
General Description These N−Channel enhancement mode field effect transistors are
produced using ON Semiconductor’s proprietary, high cell density,
DMOS technology. This very high density process is tailored to
minimize on−state resistance at low gate drive conditions. This device
is designed especially for application in battery circuits using either
one lithium or three cadmium or NMH cells. It can be used as an
inverter or for high−efficiency miniature discrete DC/DC conversion
in compact portable electronic devices like cellular phones and pagers.
This device has excellent on−state resistance even at gate drive
voltages as low as 2.5 V. www.onsemi.com SOT−23 (TO−236)
CASE 318−08
STYLE 21 Features • 25 V, 0.68 A Continuous, 2 A Peak RDS(ON) = 0.45 Ω @ VGS = 4.5 V
RDS(ON) = 0.6 Ω @ VGS= 2.7 V
Very Low Level Gate Drive Requirements Allowing Direct Operation
in 3 V Circuits, VGS(th) < 1 V
Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body
Model
Compact Industry Standard SOT−23 Surface Mount Package
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
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