Datasheet ON Semiconductor BC337-25RL1G — 数据表

BC337, BC337-25,
BC337-40
Amplifier Transistors
NPN Silicon
http://onsemi.com Features • These are Pb−Free Devices
COLLECTOR
1
2
BASE MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation @ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction
Temperature Range THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. 3
EMITTER TO−92
CASE 29
STYLE 17 …