CSD17303Q5
www.ti.com SLPS246B – JANUARY 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17303Q5 FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 18 nC Qgd Gate Charge Gate to Drain RDS(on) DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View
8 1 2 7 D S 3 6 D G 4 VGS = 4.5V 2 mΩ VGS = 8V 1.7 mΩ Threshold Voltage 1.1 V Package Media CSD17303Q5 SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 32 A IDM Pulsed Drain Current, TA = 25°C(2) 200 A PD Power Dissipation(1) 3.2 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 103A, L = 0.1mH, RG = 25Ω 530 mJ ID (1) RqJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick)
Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. …
