Datasheet New Jersey Semiconductor BF240 — 数据表

,J 20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A. TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960 BF240, BF241
NPN Silicon Epitaxial Planar Transistors
designed for emitter-grounded AM and FM amplifier stages I* max. Q5 # Plastic case = JEDEC TO-92
TO-18 compatible
The case is impervious to light
Weight approximately 0.18 g
Dimensions in mm Absolute Maximum Ratings
Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 4 V Collector Current lo 25 mA Base Current IB 2 mA Power Dissipation at Tamb = 25 °C P« 3001' mW Junction Temperature T] 150 CC Storage Temperature Range Ts -55 +150 'C " Valid provided that leads are kept at ambient temperature at a distance ot 2 mm from case NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BF240, BF241
Characteristics at Tamb = 25 °C
Symbol Min. Typ. Max. Value hFE
hFE 67
36 -220
125 -Base Emitter Voltage at VCB = 1 0 V, lc = 1 mA VBE 650 700 740 mV Collector Cutoff Current at VCB = 20 V ICBO -100 nA Thermal Resistance Junction to Ambient RlhA -420" K/W Collector Base Breakdown Voltage at lc = 1 0 /uA V(BH)CBO 40 -V Collector Emitter Breakdown Voltage at lc = 2 mA V(BR)CEO 40 -V Emitter Base Breakdown Voltage at IE = 1 0 ^A V(BH)EBO 4 -V Gain Bandwidth Product
at VCB = 10V, lc = 1 mA, f= 100MHz fj -430
400 -cre -0.27 -PF at VCB = 10V, lc = 1 mA
gs = 5 mS, t = 200 kHz …