Datasheet Rohm 2SCR586J — 数据表

2SCR586J FRG
Datasheet NPN 5.0A 80V Power Transistor l Outline Parameter Value VCEO 80V IC 5A 　 TO-263AB 　 　 　 　
　
LPTL l Features 　 l Inner circuit 1) Suitable for Power Driver.
2) Low V CE(sat)
　　VCE(sat)=300mV(Max.).
　　(IC/I B=2A/100mA)
3) AEC-Q101 Qualified l Application LOW FREQUENCY AMPLIFIER l Packaging specifications Part No. Package Taping
code 2SCR586J FRG LPTL
(TO-263AB) TLL Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
330 24 1000 Marking CR586 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved. 1/6 20180702 -Rev.001 2SCR586J FRG 　 　 　 　　 　 　　　　　　　　 Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V IC 5 A ICP*1 10 A PD*2 40 W Tj 150 ℃ Tstg -55 to +150 ℃ Collector current
Power dissipation
Junction temperature
Range of storage temperature
l Electrical characteristics (Ta = 25°C) Min. Values
Typ. Max. IC = 100μA 80 -V BVCEO IC = 1mA 80 -V BVEBO IE = 100μA 6 -V Collector cut-off current ICBO VCB = 80V -1 μA Emitter cut-off current IEBO VEB = 4V -1 μA -100 300 mV 120 -390 -Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown
voltage
Emitter-base breakdown voltage Collector-emitter saturation voltage DC current gain Conditions VCE(sat) IC = 2A, IB = 100mA …