Datasheet ON Semiconductor H11F3M — 数据表

DATA SHEET
www.onsemi.com Photo FET Optocouplers
H11F1M, H11F2M, H11F3M PDIP6 8.51x6.35, 2.54P
CASE 646BX 6
1 General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon
photo−detector. The detector is electrically isolated from the input
and performs like an ideal isolated FET designed for distortion−free
control of low level AC and DC analog signals. The H11FXM series
devices are mounted in dual in−line packages.
Features PDIP6 8.51x6.35, 2.54P
CASE 646BY 6
1 PDIP6 8.51x6.35, 2.54P
CASE 646BZ 6 • As a Remote Variable Resistor: 1 ≤ 100 W to ≥ 300 MW
♦ ≤15 pF Shunt Capacitance
♦ ≥100 GW I/O Isolation Resistance
As an Analog Switch:
♦ Extremely Low Offset Voltage
♦ 60 Vpk−pk Signal Capability
♦ No Charge Injection or Latch−Up
♦ UL Recognized (File #E90700)
These are Pb−Free Devices
♦ • • MARKING DIAGRAM ON …