Datasheet ON Semiconductor NSVRB751V40T1G — 数据表

RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited. http://onsemi.com Features •
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• Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 40 V SCHOTTKY
BARRIER DIODE 1
CATHODE MAXIMUM RATINGS
Rating 2
Symbol Value Unit VRM 40 V Reverse Voltage VR 30 Vdc Forward Continuous Current (DC) IF 30 mA Peak Forward Surge Current IFSM 500 mA Electrostatic Discharge ESD Peak Reverse Voltage 2
ANODE 1 …