Datasheet New Jersey Semiconductor 2N2322 — 数据表

, Una.
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U.S.A. 2N?322 thru 2N2326 (SILICON) All-diffused PNPN thyristors designed for gating
operation in mA/juA signal or detection circuits. (TO-5) MAXIMUM RAT!NtsS*(TJ"1 125'c unl«sotherwise noted, Rs> -1000 ohms) Symbol Rating
Peak Reverse Blocking Voltage
(Note 1) 2N2322
2N2323
2N2324
2N2325
2N2326 Non-Repetitive Peak Reverse Blocking Voltage
(t < 5 , 0 m s )
2N2322
-2N2323
2N2324
2N2325
2N2326
Forward Current RMS
(All Conduction Angles)
Peak Surge Current
(One -Half Cycle, 60 Hz) …