Datasheet APT APT40M35JVR — 数据表

APT40M35JVR
93A 0.035Ω 400V POWER MOS V ® S S Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout. 27 2
T-D G SO "UL Recognized" ISOTOP ® • Faster Switching • 100% Avalanche Tested • Lower Leakage • Popular SOT-227 Package D
G
S MAXIMUM RATINGS
Symbol
VDSS
ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT40M35JVR UNIT 400 Volts Drain-Source Voltage 93 Continuous Drain Current @ TC = 25°C
1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 700 Watts Linear Derating Factor 5.6 W/°C VGSM
PD
TJ,TSTG 372 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 93 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50
4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) 400 Volts 93 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.035 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.0mA) UNIT Ohms
µA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website -http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac -France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE
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