Datasheet Toshiba SSM10N961L — 数据表

SSM10N961L
MOSFETs Silicon N-Channel MOS SSM10N961L
1. Applications
• Power Management Switches • Battery protection circuits 2. Features
(1) Low source-source on-resistance
: RSS(ON) = 13.6 mΩ (typ.) (@VGS = 4.5 V)
: RSS(ON) = 9.9 mΩ (typ.) (@VGS = 10 V) (2) RoHS Compatible (Note 1) (3) Halogen-free
Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPAG-341501 Start of commercial production 2023-08
©2023
Toshiba Electronic Devices & Storage Corporation 1 2023-06-26
Rev.1.0 SSM10N961L
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics Symbol Rating Unit Source-source voltage VSSS 30 V Gate-source voltage VGSS ±20 V 9.0 A Source current (DC) (Note 1) Source current (DC) (Note 2) Source current (pulsed) (Note 3) ISP 72 A Power dissipation (Note 1) PD 0.88 W Power dissipation (t ≤ 10 s) IS 14.0 1.51 W Channel temperature (Note 1)
Tch 150 � Storage temperature Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on an 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 18 µm, 407 mm2, FR4 glass epoxy board
Note 2: Device mounted on an 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 70 µm, 687.5 mm2, FR4 glass epoxy board …