Datasheet Inchange Semiconductor 2N6423 — 数据表

isc Silicon PNP Power Transistor 2N6423 DESCRIPTION Collector-Emitter Breakdown Voltage: VCEO=-300V(Min) Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNI
T VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous -2 A PD Collector Power Dissipation
@ TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Storage Temperature Range -65~200 ℃ IC Tstg isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6423 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA IEBO Emitter -Base Cutoff Current VBE=-6V ICEO Collector-Emitter Cutoff Current VCE(sat)-1 MIN TYP. MAX -300 UNIT
V -500 uA VCB=-150V -5 mA Collector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1.8 V hFE-1 DC Current Gain IC=-0.75A; VCE=-2V 10 100 hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 30 150 NOTICE：
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