Datasheet IXSR40N60BD1 - IXYS IGBT, ISOPLUS247 — 数据表

详细说明

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.2 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: ISOPLUS-247
• Case Style: ISOPLUS-247
• Fall Time Tf: 180 ns
• Junction to Case Thermal Resistance A: 0.73°C/ W
• Max Current Ic Continuous a: 70 A
• Power Dissipation: 170 W
• Power Dissipation Pd: 170 W
• Pulsed Current Icm: 150 A
• Rise Time: 50 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Typ Fall Time: 180 ns
• Voltage Vces: 600 V

RoHS: Yes