Datasheet GT20J321 - Toshiba IGBT, 600 V, TO-220NIS — 数据表

详细说明

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

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Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.45 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-220NIS
• Case Style: TO-220NIS
• Junction to Case Thermal Resistance A: 2.78°C/ W
• Max Current Ic Continuous a: 20 A
• Max Junction Temperature Tj: 150°C
• Power Dissipation: 45 W
• Power Dissipation Pd: 45 W
• Pulsed Current Icm: 40 A
• Rise Time: 40 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Typ Fall Time: 40 ns
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLPG 02
• Multicomp - MK3306