Datasheet FGA90N30TU - Fairchild IGBT, TO-3P — 数据表

详细说明

Manufacturer: Fairchild

Description: IGBT, TO-3P

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Docket:
FGA90N30 300V PDP IGBT
September 2006
FGA90N30
300V PDP IGBT
Features

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 1.4 V
• Collector-to-Emitter Breakdown Voltage: 300 V
• Transistor Case Style: TO-3P
• Number of Pins: 3
• SVHC: No SVHC (18-Jun-2010)
• Case Style: TO-3P
• Current Ic @ Vce Sat: 20 A
• Current Temperature: 25°C
• Fall Time Tf: 110 ns
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 0.57°C/ W
• Max Current Ic Continuous a: 90 A
• Max Junction Temperature Tj: 150°C
• Min Junction Temperature, Tj: -55°C
• Number of Transistors: 1
• Power Dissipation: 219 W
• Power Dissipation Pd: 219 W
• Pulsed Current Icm: 220 A
• Rise Time: 200 ns
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 300 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5