Datasheet IRGIB6B60KDPBF - International Rectifier IGBT, 600 V, 9 A, TO-220FP — 数据表

详细说明

Manufacturer: International Rectifier

Description: IGBT, 600 V, 9 A, TO-220FP

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Docket:
PD-95321
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· Low VCE (on) Non Punch Through IGBT Technology.

· Low Diode VF. · 10µs Short Circuit Capability. · Square RBSOA. · Ultrasoft Diode Reverse Recovery Characteristics. · Positive VCE (on) Temperature Coefficient. · Lead-Free.
IRGIB6B60KDPbF

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.2 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-220FP
• Case Style: TO-220FP
• Fall Time Tf: 22 ns
• Max Current Ic Continuous a: 9 A
• Max Fall Time: 22 ns
• Power Dissipation: 32 W
• Power Dissipation Pd: 32 W
• Pulsed Current Icm: 22 A
• Rise Time: 17 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5
• Multicomp - MK3306