Datasheet IRG4BC10KDPBF - International Rectifier IGBT, 600 V, 9 A, TO-220 — 数据表

详细说明

Manufacturer: International Rectifier

Description: IGBT, 600 V, 9 A, TO-220

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Docket:
PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 9 A
• Max Voltage Vce Sat: 2.39 V
• Max Power Dissipation: 38 W
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-220
• Number of Pins: 3
• Case Style: TO-220
• Current Temperature: 25°C
• Fall Time Tf: 210 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 9 A
• Max Fall Time: 310 ns
• Min Short Circuit Withstand Time: 10Вµs
• Number of Transistors: 1
• Power Dissipation: 38 W
• Power Dissipation Pd: 38 W
• Pulsed Current Icm: 18 A
• Rise Time: 32 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5