BLF881; BLF881S
UHF power LDMOS transistor
Rev. 4 — 1 September 2015 Product data sheet 1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1.
Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp D IMD3 IMDshldr (MHz) (W) (W) (W) (dB) (%) (dBc) 2-tone, class AB f1 = 860; f2 = 860.1 -140 -21 49 34 -DVB-T (8k OFDM) 858 -33 21 34 -33[1] [1] (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. 1.2 Features and benefits 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 W
Power gain = 21 dB
Drain efficiency = 49 %
Third order intermodulation distortion = 34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Average output power = 33 W
Power gain = 21 dB
Drain efficiency = 34 % …
